Ab Initio Molecular Dynamics of Semiconductor Defects

Author:

Car Roberto1,Blöchl P.,Smargiassi E.

Affiliation:

1. IRRMA

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Thermochemistry of Semiconductors;Chemistry of Semiconductors;2023-11-24

2. The melting points of MgO up to 4 TPa predicted based on ab initio thermodynamic integration molecular dynamics;Journal of Physics: Condensed Matter;2018-02-22

3. Ab initio calculation of the migration free energy of oxygen diffusion in pure and samarium-doped ceria;Physical Review B;2018-01-22

4. Point Defects in Semiconductors;Physical Chemistry of Semiconductor Materials and Processes;2015-08-07

5. Modeling of defects, dopant diffusion and clustering in silicon;Journal of Computational Electronics;2013-10-23

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