Affiliation:
1. U.S. Naval Research Laboratory
2. Cree, Inc.
Abstract
Basal plane dislocations (BPDs) introduced into SiC epitaxial layers, 25 μm thick, by the combination of implantation and activation anneal are directly observed by ultraviolet photoluminescence (UVPL) imaging. BPD loops appear to originate at micron-sized or smaller areas at the surface. These loops expand by gliding along the basal plane in the offcut direction until the loops approach the substrate. The loops can glide perpendicular to the offcut direction by many millimeters.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference14 articles.
1. J.P. Bergmann, H. Lendenmann, P A. Nilsson, U. Lindefelt, and P. Skytt, Mater. Sci. Forum 353-356, 299 (2001).
2. R E. Stahlbush, M. Fatemi, J.B. Fedison, S.D. Arthur, L.B. Rowland, and S. Wang, J. Elec. Mater. 31, 370 (2002).
3. A. Kuhr, J Q. Liu, H J. Chung and M. Skowronski, Appl. Phys. 92, 5863 (2002).
4. A. Agarwal, H. Fatima, S. Haney and S.H. Ryu, IEEE Elec. Dev. Lett. 28, 587 (2007).
5. R.E. Stahlbush, Q. Zhang, A. Agarwal, N.A. Mahadik, Mater. Sci. Forum 717-720, 385 (2012).
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献