Dielectric Properties of HfO<sub>2</sub> Films Prepared on Flexible Polymer Substrates Using UV Irradiation-Reference-Cited by-同舟云学术

Dielectric Properties of HfO₂ Films Prepared on Flexible Polymer Substrates Using UV Irradiation

Published:2010-07 Issue: Volume:445 Page:164-167
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Suzuki Kazuyuki¹,Kato Kazumi²

Affiliation:

1. Advanced Industrial Science and Technology AIST

2. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

The HfO2 films were prepared on the ITO/polyimide substrate using alkoxy-derived precursor solutions at low temperature. The HfO2 films prepared by UV-assisted process using the precursor solution modified with diethanolamine had smooth surface and RMS roughness values of HfO2 film were 1.2nm. The electrical properties of HfO2 films were improved by optimization of preparation condition. The leakage current density at 1V was below 10-5A/cm2. The dielectric constant was about 20. The loss tangent was below 0.1.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.445.164.pdf

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