The Range Distribution of Er Ions Implanted in Silicon Crystal

Abstract

Due to the need to reduce electronic device sizes, it is very important to consider the depth distribution of ions implanted into a crystalline target. The mean projected ranges and range straggling for energetic 150 – 500 keV Er ions implanted in single crystal silicon (c-Si) at room temperature were measured by means of Rutherford backscattering followed by spectrum analysis. The measured results are compared with other experimental data for amorphous Si (a-Si) and Monte Carlo code (SRIM2006) predictions. Our results show that, although the experimental values for range and range straggling exceed the SRIM calculations, they are nevertheless consistent with trends that have been previously observed for a-Si.