Affiliation:
1. Westfälische Wilhelms-Universität Münster
2. University of Göttingen
3. Universität Göttingen
4. Westf. Wilhelms-Universität
Abstract
Down-scaling is a major principle of modern technology. As a consequence, the
stability of many technical devices is controlled by solid state reactions that proceed on the range of
a few nanometres only. On such a short length scale even basic aspects of reaction physics as
fundamental as e.g. the Ficks laws of diffusion, need to be reconsidered.
Only very few dedicated techniques are suitable to study atomic transport and reactions with
sufficient accuracy. Among them, the atom probe tomography is exceptional, as it allows the
detection and localization of individual atoms with an accuracy of a lattice constant. An almost
complete reconstruction of the 3D atomic arrangement of different atomic species gets possible.
This article provides an overview on recent atom probe studies of reactive diffusion. After an
introduction into the principles of the analysis method, physical mechanisms of solid state reactions
are discussed in view of recent experiments at metallic thin film interfaces. How does nucleation of
an interfacial product take place In which way do grain boundaries influence the reaction As a
technical example, the stability of Cu/NiFe GMR sensor layers is discussed.
Publisher
Trans Tech Publications Ltd
Reference20 articles.
1. M. K. Miller, Atom Probe Tomography, Kluwer Academic, New York (2000).
2. T. Al-Kassab, H. Wollenberger, G. Schmitz, R. Kirchheim in: High Resolution Imaging and Spectrometry of Materials, Ernst, T. and Rühle, M. (Eds. ), Springer, Berlin 2003, p.290.
3. D. J. Larson at al., Microsc. Microanal. 7 (2001) p.24.
4. J. Schleiwies and G. Schmitz, Mat. Sci. Eng. A327 (2002) p.94.
5. C. Michaelsen, K. Barmak, and T. P. Weihs, J. Phys. D, 30 (1997) p.3167.
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