Affiliation:
1. National Institute of Advanced Industrial Science and Technology
Abstract
A recently-developed Pt/SrBi2Ta2O9/(HfO2)x(Al2O3)1-x /Si FET (x=0.75) shows outstanding data
retention characteristics. The drain current ratio between the on- and off-states is more than 2 x 106
after 12 days, and the decreasing rate of this ratio is so small that the extrapolated ratio after 10 years
is larger than 1 ×105. Among various materials researched for this decade, the combination of
SrBi2Ta2O9 and (HfO2)x(Al2O3)1-x or Hf-Al-O is regarded as the best choice presently. Device
performance by changing the Hf and Al composition ratio is investigated, and an Hf-rich-side region
around x = 0.75 is found most suitable. Pure HfO2 (x=1) is also a good candidate, but the gate leakage
current increase due to HfO2 crystallization is observed. Very recently, we fabricated a self-aligned
gate Pt/SrBi2Ta2O9/Hf-Al-O/Si FET, and measured the retention characteristics for 33.5 day that is
the longest period measured so far. This also shows a sufficiently large ratio of 2.4 × 105 after 33.5
day which will be 6.5 × 104 after 10 years by extrapolation. The development of a self-aligned gate
FeFET is an inevitable step of FeFET miniaturization according to the LSI scaling rule.
Publisher
Trans Tech Publications Ltd
Cited by
3 articles.
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