Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results-Reference-Cited by-同舟云学术

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Comparison between Different Schottky Diode Edge Termination Structures: Simulations and Experimental Results

Published:2003-09 Issue: Volume:433-436 Page:827-830
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

La Via Francesco¹,Roccaforte Fabrizio²,di Franco Salvatore²,Raineri Vito²,Moscatelli Francesco³,Scorzoni Andrea⁴,Cardinali G.C.³

Affiliation:

1. Istituto per la Microelettronica e Microsistemi IMM-CNR

2. Consiglio Nazionale delle Ricerche (CNR)

3. CNR-IMM

4. Univeristà di Perugia

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.827.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Side wall tilt-implanted trench termination for SiC power devices;Japanese Journal of Applied Physics;2015-03-25

2. Design, Fabrication, and Characterization of Ni/4H-SiC (0001) Schottky Diodes Array Equipped With Field Plate and Floating Guard Ring Edge Termination Structures;IEEE Transactions on Semiconductor Manufacturing;2012-11

3. 4H-SiC Trench Structure Schottky Diodes;Materials Science Forum;2012-05

4. 600 V 100 A 4H-SiC Junction Barrier Schottky Diode with Guard Rings Termination;Materials Science Forum;2007-09

5. High performance SiC diodes based on an efficient planar termination;2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676)

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