Abstract
4H-SiC SBDs have been commercialized for power application devices. However, the
maximum current of these SBDs is 20A. In this work, we designed a JBS (junction barrier
Schottky) diode structure and the fabrication processes to be optimized. The current and breakdown
voltage were over 100 A and 660 V at Ir = 1 mA/cm2, respectively. The recovery characteristics of
the JBS diode are much superior to those of the Si-FRD while it is comparable to those of the
commercially available SiC-SBD at elevated temperatures up to 125°C..
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
10 articles.
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