Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes-Reference-Cited by-同舟云学术

Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes

Published:2003-09 Issue: Volume:433-436 Page:197-200
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kimoto Tsunenobu¹,Danno Katsunori²,Fujihira Keiko³,Shiomi Hiromu⁴,Matsunami Hiroyuki¹

Affiliation:

1. Kyoto University

2. Toyota Motor Corporation

3. Mitsubishi Electric Corporation

4. Sixon Ltd.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.433-436.197.pdf

Reference12 articles.

1. S. Yoshida, S. Nishino, H. Harima and T. Kimoto, Eds.: Silicon Carbide and Related Materials 2001 (Trans Tech Publications, Zuerich, 2002), part 2.

2. P. G. Neudeck and J. A. Powell: IEEE Electron Device Lett. Vol. 15 (1994), p.63.

3. J.A. Cooper, Jr., M.R. Melloch, R. Singh, A. Agarwal and J.W. Palmour: IEEE Trans. Electron Devices Vol. 49 (2002), p.658.

4. T. Kimoto, S. Nakazawa, K. Fujihira, T. Hirao, S. Nakamura, Y. Chen, K. Hashimoto and H. Matsunami: Mater. Sci. Forum Vol. 389-393 (2002), p.165.

5. T. Hirao, H. Yano, T. Kimoto, H. Matsunami and H. Shiomi: Mater. Sci. Forum Vol. 389-393 (2002), p.1065.

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