Affiliation:
1. Tallinn University of Technology
2. Tartu University
3. Institute of Chemical Physics and Biophysics
4. Athens University
Abstract
It has been shown by means of EPR and NMR technique that at the Si-SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130oC the dencity of point defects is less than at lower and higher temperature (1100oC and 1200°C) and the content of absorbed impurities (hydrogen, oxygen) diminishes.
Publisher
Trans Tech Publications, Ltd.
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