On the kinetics of the generation of point defects in the Si-SiO2 system-Reference-Cited by-同舟云学术

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On the kinetics of the generation of point defects in the Si-SiO2 system

Published:1996-05 Issue:5 Volume:62 Page:469-472
ISSN:0947-8396
Container-title:Applied Physics A Materials Science and Processing
language:en
Short-container-title:Appl. Phys. A

Author:

Kropman D.,Dolgov S.,Karner T.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry

Link

http://link.springer.com/content/pdf/10.1007/BF01567119.pdf

Reference12 articles.

1. Y. Nishi: Jpn. J. Appl. Phys.10, 52 (1971)

2. E.H. Poindexter, P.S. Caplan: Prog. Surf. Sci.14, 201 (1983)

3. P.S. Caplan, E.H. Poindexter, B.E. Deal, R. Razouk: J. Appl. Phys.50, 5847 (1979)

4. D. Kropman, T. Kärner: Phys. Stat. Sol. (a)136, 125 (1993)

5. D. Kropman, A. Sügis, M. Vinnal: Phys. Stat. Sol. (a)44, KI (1977)

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