Characterization of CNx/Si Using RBS, NRA and AES Techniques

Abstract

Carbon nitride films were synthesized by pulsed laser ablation of graphite target under nitrogen ambience. The third harmonic of a pulsed Nd-YAG laser of 355 nm wavelength and 7 ns pulse duration was focused onto a rotating target at an incidence angle of 45°. The laser fluence at the target surface was set at 30 J/cm2. The carbon nitride films were deposited on (100) silicon substrate kept at room temperature and placed at a distance of 40 mm from the target surface. The CNx films were grown under N2 gas in the pressure range of 5×10-3 to 4×10-1 mbar. The deposited films composition was investigated by different techniques RBS, NRA and AES. We found an N/C ratio equal to 0.4 in the pressure range cited above.