Affiliation:
1. Zhejiang Normal University
2. Zhejiang University of Technology
Abstract
Experimental research on the surface quality parameters such as roughness and removal rate in the precision lapping of sapphire was promoted in this paper, effects of processing parameters as load, speed of rotation, grain size and density on sapphire surface quality was studied by experiments. Results showed that lapping load and rotate speed were the most important factors on the removal rate, grain size played a key role in the removal rate and roughness under the same conditions, profile tolerance of surface shape depends on the flatness.
Publisher
Trans Tech Publications, Ltd.
Reference9 articles.
1. Grzegory I.: High nitrogen pressure growth of GaN crystals and their applications for epitaxy of GaN based structures, Journal of Materials Science and Engineering, (2001), pp.30-34.
2. X.H. Wang, X.L. Liu and D.C. Lu: The Chemical Polishing Research of Sapphire Substrate Applied on GaN Growth, Journal of Semiconductor, Vol. 10 (1996), pp.57-62.
3. C.G. Liang,Y. Zhang: The Dawning of The Third Generation Semiconductor-GaN, Journal of Semiconductor, Vol. 2 (2000), pp.89-99.
4. Chol K.S., John S.T.: Optimum machining of optical crystals, Journal of Mechanical Engineering, Vol. 4 (2003), pp.68-72.
5. Nakamura S. Ann: InGaN-based Laser Diodes, Rew. Mater. Sci, Vol. 28 (1998), p.125.
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献