InGaN-BASED LASER DIODES

Abstract

▪ Abstract  Continuous-wave operation of InGaN multi-quantum-well (MQW) structure laser diodes (LDs) has been demonstrated at room temperature with output power up to 50 mW, operating temperature up to 100°C, emission wavelength of 400–420 nm, and a lifetime up to 300 h. InGaN MQW LDs with a lifetime of more than 1000 h are expected soon. Commercialization will begin in 1998 if research on the bluish-purple InGaN-based laser diodes continues to progress. The stimulated emission of the InGaN-based LDs originates from localized energy states of 100–250 meV depth, which are equivalent to quantum dot energy states, probably arising from from InGaN composition fluctuation in the InGaN well layers.