Three-Dimensional Ultrafast Laser Micromachining of Silicon for Microsystems

Abstract

The result of direct ablation of silicon by an 800 nm Ti:Sa femtosecond laser pulses are presented. The minimum size of the crater on the silica surface ~ 250 nm was obtained, and in the central region of this crater can be identified about 170 nm in depth. In the ablation mode by single pulses received ordered structure with a length of ~ 230 nm and width of ~ 1.8 um and a period of ~ 1 um. Increasing the number of pulses without changing the focus position leads to complex and heterogeneous structure of modifications of silicon.