Highly Strained Silicon Nitride Thin Film Deposited by PECVD with Double Frequencies in Strained Silicon Technologies-Reference-Cited by-同舟云学术

Highly Strained Silicon Nitride Thin Film Deposited by PECVD with Double Frequencies in Strained Silicon Technologies

Published:2014-06 Issue: Volume:936 Page:255-258
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Shu Bin¹,Chen Jing Ming¹,Zhang He Ming¹,Zhu Feng¹,Quan Pu Li¹,Gu Jiang Yuan¹,Xuan Rong Xi¹,Hu Hui Yong¹,Song Jian Jun¹

Affiliation:

1. Xidian University

Abstract

The mechanism of high stress in silicon nitride thin film is studied systematically in this paper. The effects of the various process parameters on the stress in silicon nitride thin film deposited by PECVD are analyzed and discussed. The silicon nitride thin film with high compressive and tensile stress has been deposited on the optimized process parameters and the compressive and tensile stress are up to-1.38GPa and 866MPa, respectively. Finally, the method of further improving the stress in silicon nitride thin film is presented.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.936.255.pdf

Reference8 articles.

1. S. E. Thompson, M. Armstrong, C. Auth, A logic nanotechnology featuring strained-silicon, IEEE Electron Device Letters, 25(2004), 191-196.

2. S. L. Wu, Y. M. Lin and S. J. Chang, Enhanced CMOS Performances Using Substrate Strained SiGe and Mechanical Strained Si Technology, IEEE Electron Device Letters, 27(2006), 46-49.

3. R. Arghavani, L. Xia and H. M'Saad, A Reliable and Manufacturable Method to Induce a Stress of >1 GPa on a P-Channel MOSFET in High Volume Manufacturing, IEEE Electron Device Letters, 27(2006), 114-118.

4. S. E. Thompson, M. Armstrong and C. Auth, A 90-nm Logic Technology Featuring Strained-silicon, IEEE Transactions on Electrons Devices, 51(2004), 1790-1796.

5. J. Wang, Strained silicon Technology expanding the Moore's Law, Microelectronics. 38(2008), 50-53.

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