Abstract
We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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