Effects of Ion Bombardment upon Microcrystalline Silicon Growth
Author:
Affiliation:
1. Ecole Polytechnique
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Link
https://www.scientific.net/SSP.80-81.71.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microcrystalline silicon thin films deposited by matrix-distributed electron cyclotron resonance plasma enhanced chemical vapor deposition using an SiF4 /H2chemistry;Journal of Physics D: Applied Physics;2016-06-21
2. Advances in the deposition of microcrystalline silicon at high rate by distributed electron cyclotron resonance;Thin Solid Films;2008-08
3. Microcrystalline Silicon Thin-Films Grown by Plasma Enhanced Chemical Vapour Deposition - Growth Mechanisms and Grain Size Control;Solid State Phenomena;2003-06
4. Ion bombardment effects on microcrystalline silicon growth mechanisms and on the film properties;Journal of Applied Physics;2003-01-15
5. Ion bombardment effects on the microcrystalline silicon growth mechanisms and structure;Journal of Non-Crystalline Solids;2002-04
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