Affiliation:
1. Mitsubishi Chemical Corporation Science and Innovation Center
2. Mitsubishi Chemical Corporation Onahama Plant
3. IMEC
Abstract
3 formulated etchants were prepared and their etch rates were measured using blanket wafers in order to confirm that the etching reactions on Si1-XGeX and Si are controllable. Si1-XGeX selective etching with those formulations was also verified using the wafers which had Si1-XGeX and Si multi-stacked structures. Cross-sectional transmission electron microscope (TEM) images suggested that the formulations were usable for Si1-XGeX selective etching processes.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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