Affiliation:
1. Kwansei Gakuin University
Abstract
Effect of storage in air on silicon doped indium oxide (In-Si-O) thin-film transistors fabricated via solution processing has been investigated. The on/off ratio drastically increased from 101 just after fabrication to 105 on the 10-day storage, whereas the mobility slightly decreased from 1.4 cm2/Vs to 0.38 cm2/Vs. Time constant of aging effect was 3.6 days. The behavior suggests that oxygen defects in In-Si-O films, which may be produced during thermal evaporation of Al electrodes under high vacuum, are eliminated.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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