Towards Si-Cap-Free SiGe Passivation: Impact of Surface Preparation on Low-Pressure Oxidation of SiGe
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Published:2021-02
Issue:
Volume:314
Page:49-53
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ISSN:1662-9779
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Container-title:Solid State Phenomena
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language:
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Short-container-title:SSP
Author:
Wostyn Kurt1,
Arimura Hiroaki1,
Kimura Yosuke1,
Hikavyy Andriy1,
Rondas Dirk1,
Conard Thierry1,
Ragnarsson Lars Åke1,
Horiguchi Naoto1
Abstract
The steam oxidation of SiGe shows a transition from Si-like to Ge-like oxidation behavior depending on Ge concentration and oxidation temperature. Ge-like oxidation is described by the generation of oxygen vacancies (VO) at the interface between the oxide and SiGe virtual substrate. [1] Due to the different oxidation behavior, the presence of a Ge-oxide-free interfacial layer (IL) can suppress SiGe oxidation. [2] Here we show how a passivating interfacial layer can be grown using low-pressure oxidation and highlight the importance of SiGe surface preparation prior to low-pressure oxidation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
Reference14 articles.
1. K. Wostyn et al. presented at ISTDM/ICSI (2018).
2. K. Wostyn et al. ECS Trans 93 (2019) p.71.
3. G. Yeap et al. IEDM (2019) p.879.
4. C.H. Lee et al. VLSI Tech. Dig. (2016) p.36.
5. H. Arimura et al. IEDM (2019) p.677.
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