RETRACTED: A Novel Material for Laser Diodes of Optical Fiber Communication-Reference-Cited by-同舟云学术

RETRACTED: A Novel Material for Laser Diodes of Optical Fiber Communication

Published:2013-09-18 Issue: Volume:760-762 Page:45-49
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Wang Fang¹,Zhang Wei¹,Liu Yu Huai¹,Yang Shou Yi¹,Zhang Yuan Tao²,Ryuji Katayama³,Matsuoka Takashi³

Affiliation:

1. Zhengzhou University

2. Jilin University

3. Tohoku University

Abstract

Retracted paper: The conventional material for the optical fiber communication laser diode is based on InGaAsP, which might be substituted by a potential candidate, InGaAlN. The new active region material, InN, is introduced regarding to its crystal growth and characterization, including the structural, optical and electrical properties. This material is promising for providing good performance of temperature stability of the wavelength. In addition, it is environmentally friendly.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.760-762.45.pdf

Reference12 articles.

1. T. Hanada, Y. H. Liu, T. Kimura, Y. Zhang, K. Prasertsuk, R. Katayama, and T. Matsuoka. Temperature Dependence of Bandgap Energy of InN Grown by Pressurized-Reactor MOVPE, The 6th International Workshop on Nitride Semiconductors (IWN2010), CP1. 28 (Tampa, USA, Sept. 17-25, 2010).

2. T. Hanada, Y. H. Liu, Y. T. Zhang, H. Tajiri, O. Sakata, T. Kimura, K. Prasertsuk, R. Katayama, and T. Matsuoka. Temperature-Dependent Static Correlation Functions of Vibrational Atomic Displacements for InN Film Measured by X-ray Diffraction, The 9th International Conference on Nitride Semiconductors (ICNS-9), PD3. 31 (Glasgow, UK, July 10-15, 2011).

3. Y. H. Liu, Y. T. Zhang, T. Kimura, S. Y. Ji, and T. Matsuoka. Growth of InN by Pressurized Reactor MOVPE: Morphology Evolution, The 8th International Conference on Nitride Semiconductors (ICNS-8), ThP23, (Jeju, Korea, Oct. 18-23, 2009).

4. Y. H. Liu, T. Kimura, T. Shimada, M. Hirata, M. Wakaba, M. Nakao, S. Y. Ji, and T. Matsuoka. MOVPE growth of InN: A comparison between a horizontal and a vertical reactor, phys. stat. sol. (c), 2009, 6, S381-S384.

5. T. Sasaki and T. Matsuoka. Analysis of two-step-growth conditions for GaN on an AlN buffer layer, J. Appl. Phys., 1995, 77, 192-200.