Effect of Working Pressure on Structural, Electrical and Optical Properties of CIGS Thin Film Deposited by PLD

Abstract

CuIn0.8Ga0.2Se2 (CIGS) thin films have been successfully deposited on soda lime glass substrate at different working (Ar gas) pressures by Pulsed laser deposition (PLD). The effect of working pressure on the structural, electrical and optical properties of CIGS thin films has been investigated. All deposited CIGS thin films are found to be polycrystalline in nature with preferred orientation along (112). Crystallinity of CIGS thin films has been improved with decreasing of working pressures in PLD chamber. Stoichiometry of CIGS thin films has been maintained for all working pressures. Optical transmittance and electrical sheet resistance of CIGS thin films have been found to decrease with decrease of working pressure. The results of the present study signify that desired structural, electrical and optical properties of CIGS thin films can be obtained by changing the processing parameter in PLD method.Keywords: CIGS, XRD, Stoichiometry, UV-Vis-NIR spectrophotometer.