Abstract
Pt/Bi3.15Nd0.85Ti3O12(BNT)/Pt ferroelectric capacitors were monitored using in situ X-ray irradiation with 10 keV at BL14B1 beamline (Shanghai Synchrotron Radiation Facility). BL14B1 combined with a ferroelectric analyzer enabled measurements in situ of electrical performance. The hysteresis curve (PE) of distortion depended on the polarization during irradiation, but the diffracted intensities of the (117) peak did not change in the beginning. ThePEcurve had a negligible change from 2.09×109Gy to 4.45×109Gy. Finally, bothPrandPr+very rapidly increased, but the intensities of (117) decreased. The hysteresis loops were remarkably deformed at the maximum total dose of 4.87×109Gy.
Publisher
Trans Tech Publications, Ltd.
Reference27 articles.
1. G. Cellere and A. Paccagnella, A Review of Ionizing Radiation Effects in Floating Gate Memories, Device and Materials Reliability, IEEE Transactions on, vol. 4, no. 3, p.359 – 370, Sep. (2004).
2. D. Hayashigawa, D. Kamp and A. Devilbiss, Non–Volatile Memory Technology Symposium, p.60 – 63, Nov. ( 2007).
3. L. Courtade, Ch. Muller, G. Andreoli, and Ch. Turquat, Appl. Phys. Lett., vol. 89, no. 11, pp.113501-1–113501-3, Sep. (2006).
4. N. Menou, A. –M. Castagnos, C. Muller, JOURNAL OF APPLIED PHYSICS, vol. 97, no. 04, pp.044106-1–04106-8, Jan. (2005).
5. D. Wu, A. D. Li, H. Q. Ling, T. Yu, Z. G. Liu, N. B. Ming, Appl. Phys. A. vol. 73, no. 2, p.255–257, Jun. (2001).