Abstract
Recently, abrasive-free polishing (AFP) has attracted a great deal of attention due to its gentler polishing process and lower particle residue than traditional chemical mechanical polishing (CMP). Our present work investigates the effectiveness of Cu (II) ion on AFP of hard disk substrate in peroxyacetic acid (PAA) system slurry. The polishing experimental results show that the PAA/Cu (II) system slurry has higher material removal rate (MRR) and lower roughness (Ra) than PAA system. Further, the reaction mechanism of Cu (II) ion in PAA/Cu (II) system AFP of hard disk substrate was investigated preliminarily by electrochemical analysis.
Publisher
Trans Tech Publications, Ltd.
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