Defect Engineering Radiation Tolerant Silicon Detectors-Reference-Cited by-同舟云学术

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Defect Engineering Radiation Tolerant Silicon Detectors

Published:1997-07 Issue: Volume:57-58 Page:221-232
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

MacEvoy B.C.¹,Watts S.J.

Affiliation:

1. Imperial College London

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.57-58.221.pdf

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Detection of Single W-Centers in Silicon;ACS Photonics;2022-07-05

2. The Ci(SiI)n defect in neutron-irradiated silicon;Journal of Materials Science: Materials in Electronics;2019-11-30

3. Chemistry and Physics of Point Defects in Advanced Ceramics;Journal of Inorganic Materials;2009-06-11

4. Isochronal annealing studies of carbon-related defects in irradiated Si;Physica B: Condensed Matter;2006-04

5. Influence of growing and doping methods on radiation hardness of n-Si irradiated by fast-pile neutrons;Semiconductor Physics, Quantum Electronics and Optoelectronics;2004-03-30

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