Influence of Lapping Parameters on 6H-SiC Crystal Substrate (0001) C Surface Based on Diamond Particle-Reference-Cited by-同舟云学术

Influence of Lapping Parameters on 6H-SiC Crystal Substrate (0001) C Surface Based on Diamond Particle

Published:2012-09 Issue: Volume:565 Page:237-242
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Su Jian Xiu¹,Liu Xing Long²,Zhang Zhu Qing²,Liu Zhi Xiang³

Affiliation:

1. Henan Institute of Science and Technology

2. Henan University of Technology

3. Henan Polytechnic University

Abstract

The SiC crystal substrate has been widely used in the area of microelectronics, photonics and new materials, such as semiconductor lighting, integrated circuits, and so on. In this paper, the influences of the lapping parameters, such as the rotational velocity of the lapping platen and the carrier and the polishing pressure on the material removal rate (MRR) and surface roughness Ra of SiC crystal substrate (0001) C surface based on the diamond particle in lapping. This study results will provide the reference for developing the abrasive paste, optimizing the process parameters and researching the material removal mechanism in lapping of SiC crystal substrate.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.565.237.pdf

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