Abstract
Abstract
In this letter, we optimize the flatness of 4H silicon carbide (4H-SiC) wafers by tuning the sequence of single-sided lapping, enlightened by the different mechanical properties of the Si face and C face of 4H-SiC. After wire sawing, the coarse lapping and fine lapping are carried out to rapidly remove the surface damage and optimize the flatness of 4H-SiC wafers. From the point of view of controlling the values of the bow and warp of 4H-SiC wafers, the coarse-lapping sequence of the C-face lapping followed by Si-face lapping is beneficial, while the preferred fine-lapping sequence is Si-face lapping followed by C-face lapping. Nanoindentation tests indicate that the C face has higher hardness and lower fracture toughness than the Si face. This gives rise to thicker surface damage at the C face after the wire sawing. After removing the same amount of wire-sawing induced surface damage, the thickness of residual surface damage of the C face is higher than that of the Si face after the coarse lapping. The fine lapping basically removes all the surface damage and creates the near-perfect C face and Si face. The higher amount of surface damage of the C face after the coarse lapping and the higher fracture toughness of the near-perfect Si face after the fine lapping can tolerate more plastic deformations, which gives rise to the superior flatness of the C-face-followed-by-Si-face coarse lapped and the Si-face-followed-by-C-face fine lapped 4H-SiC wafers, respectively.
Funder
Zhejiang University Education Foundation Global Partnership Fund
Natural Science Foundation of China for Innovative Research Groups
National Key Research and Development Program of China
“Pioneer” and “Leading Goose” R&D Program of Zhejiang
Fundamental Research Funds for the Central Universities
Natural Science Foundation of China
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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