Solid State Reaction Synthesis and Thermoelectric Properties of Ag-Doped Mg2Si0.8Ge0.2-Reference-Cited by-同舟云学术

Solid State Reaction Synthesis and Thermoelectric Properties of Ag-Doped Mg₂Si_0.8Ge_0.2

Published:2006-07 Issue: Volume:313 Page:177-182
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Liu Qiong Zhen¹,Zhang Lian Meng²,Shen Qiang²,Jiang Hong Yi²,Wang Chuan Bin²

Affiliation:

1. Shanghai Jiao Tong University

2. Wuhan University of Technology

Abstract

By two-step solid state reaction, Mg2Si0.8Ge0.2 was successfully synthesized .The effect of Ag-doping concentration on the thermoelectric transport properties of p-type Mg2Si0.8Ge0.2 was investigated. With the increasing of Ag-doping concentration, the electrical conductivity σ and Seebeck coefficient α increase correspondingly over the measuring temperature range (300-800K).The peaks of the curves of Seebeck coefficient versus temperature shift towards the lower temperature .When the doping concentration of Ag is 16000ppm(nominal molar percent), the power factor P of Mg2Si0.8Ge0.2 reaches 4.4×10-4W/mK2 at 800K,obviously improved in comparison with the sample with no additive .

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.313.177.pdf

Reference10 articles.

1. R. G. Morris. Semiconducting Properties of Mg2Si Single Crystal. Physical Review, Vol. 109, Num. 6, March 15, (1958).

2. N.D. Marchuk, V.K. Zaitsev, M.I. Fedorov and A.E. Kaliazin. Thermoelectric Properties of Some Cheap n-type Materials", Proceedings of the 8 th International Conference on Thermoelectric Energy Conversion and the 2nd European Conference on Thermoelectric, 1998, 210-214.

3. Cronin B. Vining, Silicide as promising thermoelectric materials, Proceedings of the 4th International Conference on Thermoelectric (USA), 1990, 249-259.

4. Y. Noda. Preparation and thermoelectric properties of Mg2Si1-XGeX (x=0. 0~0. 4) solid solution semiconductors. Materials Transactions, JIM Vol. 33, Iss. 9: 845-850.

5. Y. Noda.H. Kon.Y. Furukawa. Preparation and thermoelectric properties of Mg2Si1-XGeX Pro- ceedings of the 12 th International Conference on Thermoelectric Energy Conversion, Yokohama, Japan, p.260, (1993).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The structural, microstructural and thermoelectric properties of Mg2Si synthesized by SPS method under excess Mg content conditions;Journal of Alloys and Compounds;2019-02

2. Thermoelectric Performance of Sb- and La-Doped Mg2Si0.5Ge0.5;Journal of Electronic Materials;2012-03-09