Preparation and Thermoelectric Properties of Mg2Si1−xGex (x=0.0∼0.4) Solid Solution Semiconductors-Reference-Cited by-同舟云学术

Preparation and Thermoelectric Properties of Mg₂Si_1−xGe_x (x=0.0∼0.4) Solid Solution Semiconductors

Author:

Noda Yasutoshi¹,Kon Hiroyuki¹,Furukawa Yoshitaka¹,Otsuka Nobuyuki¹,Nishida Isao A.²,Masumoto Katashi³⁴

Affiliation:

1. Department of Materials Science, Faculty of Engineering, Tohoku University

2. National Research Institute for Metals

3. Department of Electronic Materials, Faculty of Science and Technology, Ishinomaki Senshu University

4. Research Institute for Electric and Magnetic Materials

Publisher

Japan Institute of Metals

Subject

General Engineering

Link

Reference29 articles.

4. 4) E. N. Nikitin and V. K. Zaitsev: Inorg. Mater., 2 (1966), 1698.

5. 5) E. N. Nikitin, V. E. N. Tkalenko, V. K. Zaitsev, A. I. Zaslavskii and A. K. Kuznetsov: Inorg. Mater., 4 (1968), 1656.

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