Influence of Conduction-Type on Thermal Oxidation Rate in SiC(0001) with Various Doping Densities

Abstract

It was discovered that the oxidation rate for SiC depended on the conduction type. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2×1016cm-3to 1×1019cm-3, and aluminum doping (p-type) in the range from 2×1015cm-3to 1×1019cm-3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness decreases. Note that in the case of Si oxidation, there exists very little difference of oxidation rate between the conduction types in such low doping density, and the dependence is peculiar to SiC.