Analytical Prediction of the Cross-Over Point in the Temperature Coefficient of the Forward Characteristics of 4H−SiC p+−i−n Diodes

Abstract

ForwardJD–VDcurves of 4H−SiC p−i−n diodes are analyzed by means of an analytical model in order to justify the presence of a crossing−point. The interlacing behaviour occurring in theJD–VDcurves of 4H−SiC diodes at different temperatures is predicted by a simple formula, which can be used for a first-order design of such devices. Numerical simulation of diodes designed with different epilayer thickness and carrier lifetime values have been used in order to analyze the crossing−point behaviour. Comparisons with experimental data confirm the analytic and simulated results.