Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation-Reference-Cited by-同舟云学术

Effect of Bulk Potential Engineering on the Transport Properties of SiC MOSFETs: Characterization and Interpretation

Published:2015-06 Issue: Volume:821-823 Page:737-740
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Uhnevionak Viktoryia¹,Burenkov Alex¹,Strenger Christian¹,Ortiz Guillermo²,Mortet Vincent³,Bedel-Pereira Elena²,Cristiano Fuccio²,Bauer Anton J.¹,Pichler Peter¹

Affiliation:

1. Fraunhofer Institute of Integrated Systems and Device Technology (IISB)

2. CNRS-LAAS

3. Academy of Sciences of the Czech Republic

Abstract

The effect of bulk potential engineering on the transport properties in the channel of SiC MOSFETs has been studied. For this purpose, n-channel SiC MOSFETs have been manufactured with different background doping concentrations and characterized electrically at room temperature by current-voltage as well as by Hall-effect measurements. To interpret the measurements performed, numerical simulations have been carried out using Sentaurus Device of Synopsys. The main finding of the simulation analysis is that the change in the depth of the band-bending has to be considered to explain the doping dependence of SiC MOSFET characteristics.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.737.pdf

Reference10 articles.

1. S-H Ryu et al., Mater. Sci. Forum 615-617, 743 (2009).

2. K. Matocha, Solid-State Electronics, 52, 1631 (2008).

3. C. Strenger, Herstellung und Charakterisierung von Metall-Oxid-Halbleiter-kondensatoren und Feldeffekttransistoren auf 4H-Siliciumcarbid, Ph.D. thesis, to be published.

4. V. Uhnevionak, Ph.D. thesis to be submitted to the Technical Faculty of the University Erlangen-Nuremberg.

5. G. Ortiz et al., Impact of fabrication process on electrical properties and on interfacial density of states in 4H-SiC n-MOSFETs studied by Hall effect, to be published.