MOS Interface Characteristics of In Situ Ge-Doped 4H-SiC Homoepitaxial Layers

Author:

Salinaro Alberto1,Alassaad Kassem2,Peters Dethard1,Friedrichs Peter1,Ferro Gabriel2

Affiliation:

1. Infineon Technologies AG

2. Université de Lyon

Abstract

We report on the electrical characterization of the Metal-Oxide-Semiconductor (MOS) interfacerealized on in-situ Ge-doped n-type 4H-SiC epilayers grown by Chemical Vapour Deposition(CVD). In order to study the relevance of this novel material for MOSFET technology, and in particularwhether the Ge presence deteriorates the SiC/SiO2 interface, we investigated the electrical propertiesof MOS capacitors realized on this novel substrate. Capacitance-Voltage measurements, performedto determine the quality of the SiC/SiO2 interface, show that the interface traps concentration is notincreased by the Ge content. The current through the oxide layer, monitored to study the bulk oxidequality and the tunneling mechanisms, indicates that Fowler-Nordheim conduction occurs and that thesubstrate-to-oxide barrier for electrons is comparable to the reported values for the SiC/SiO2 system.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Growth and doping of silicon carbide with germanium: a review;Critical Reviews in Solid State and Materials Sciences;2021-03-24

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