A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas-Reference-Cited by-同舟云学术

A Method to Adjust Polycrystalline Silicon Carbide Etching Rate Profile by Chlorine Trifluoride Gas

Published:2017-05 Issue: Volume:897 Page:383-386
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Nakagomi Ken¹,Okuyama Shogo¹,Habuka Hitoshi¹,Takahashi Yoshinao²,Kato Tomohisa³

Affiliation:

1. Yokohama National University

2. Kanto Denka Kogyo Co., Ltd

3. National Institute of Advanced Industrial Science and Technology (AIST)

Abstract

A method to adjust the polycrystalline SiC etching rate was studied taking into account the chlorine trifluoride gas transport. The etching rate profile over the 50-mm-diameter SiC wafer could be made symmetrical by means of the wafer rotation. By activating and indeactivating the pin-holes at the various positions of the gas distributor, the etching rate profile could be locally adjusted.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.897.383.pdf

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