Mirror Etching of Single Crystalline C-Face 4H-Silicon Carbide Wafer by Chlorine Trifluoride Gas
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference22 articles.
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1. Chlorine Trifluoride Gas Etching Design for Quickly and Uniformly Removing a Thick C-Face 4H-Silicon Carbide Layer;ECS Advances;2022-11-25
2. Anticorrosive Behavior of Aluminum Nitride Surface Exposed to Chlorine Trifluoride Gas at High Temperatures;ECS Journal of Solid State Science and Technology;2021-03-01
3. High-Speed Etching of Silicon Carbide Wafer Using High-Pressure SF6 Plasma;ECS Journal of Solid State Science and Technology;2021-01-01
4. Etching Rate Profile of C-Face 4H-SiC Wafer Depending on Total Gas Flow Rate of Chlorine Trifluoride and Nitrogen;Materials Science Forum;2020-07
5. Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Carbide Wafer;Materials Science Forum;2020-07
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