Tuning Optoelectronic Properties of 4H-SiC QDs Using -H, -OH and -F Surface Functionalisation

Author:

Rashid Marzaini1,Tiwari Amit Kumar1,Wood Neal1,Briddon Patrick1,Goss Jonathan P.1,Rayson M.J.2,Wright Nick1,Horsfall Alton B.1

Affiliation:

1. Newcastle University

2. University of Surrey

Abstract

Density functional calculations were performed for the –H, –OH and –F functional groups adsorbed onto the surface of pseudo-spherical 4H-SiC quantum dots with diameters ranging from 10 to 22 Å. We find that for the investigated diameter range, the H-terminated SiC-quantum dots exhibit strong size dependent quantum confinement effects, while for –F and –OH terminations, the optical gap remains largely unchanged. The –H termination shows an optical absorption onset well above that of –F and –OH for a similar cluster size, which is attributed to the localisation of HOMO and LUMO states to the quantum dot core. Based on our calculations, we suggest that the –H functionalisation is a more promising route for engineering the optical properties of SiC-quantum dots, since this could lead to a wider control over the optical absorption onsets, when compared to –OH and –F terminations.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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