Dynamic Characterization of the Threshold Voltage Instability under the Pulsed Gate Bias Stress in 4H-SiC MOSFET

Abstract

The threshold voltage (Vth) instability of 4H-SiC MOSFETs was investigated using high-speed IV measurement instrument. DC stress measurement of wide time span ranging from 10-6 to 103 s without relaxation effect was conducted. The high-speed measurement allowed of dynamic ΔVth measurement under pulsed AC gate bias stress. We investigated effects of NO POA in gate oxidation process on the Vth instabilities.