Epitaxial Growth on 150 mm 2° off Wafers

Abstract

In this work a new epitaxial process on 6 inches has been performed on 2° off-cut substrate. This off-cut will reduce the material loss during substrate preparation from the crystal boule. The thickness and doping uniformity of the samples grown in the LPE reactor PE1O6 is extremely good and the PL map shows a low defects density. The roughness is slightly higher on 2° off-cut and the process window becomes narrower.