Progress of SiC Epitaxy on 150mm Substrates

Abstract

This paper presents the current performance of 150mm SiC epitaxy on state-of-the-art 150mm substrates. Excellent on-wafer uniformity has been achieved with mean thickness uniformity at 1.8% and mean doping uniformity at 5.4%. The epilayer surface is smooth across wafer diameter with a typical defect density below 1 cm-2. Within a run, wafer-to-wafer variation of 0.7 % for thickness and 5% for doping is demonstrated. The mean values of warp and bow after epitaxy are 35 um 15 μm, respectively. The above metrics are critical to enable cost effective production of 150mm SiC epiwafers suited for device fabrication.