SiC Epitaxial Growth in a 7x100mm/3x150mm Horizontal Hot-Wall Batch Reactor

Abstract

We present results on the homo-epitaxial growth on the Si face of 100 mm and 150 mm (0001)-oriented (4° off-orientation) 4H SiC wafers utilizing the horizontal hot-wall batch reactor Probus-SiCTM from Tokyo Electron Limited. Standard epitaxial growth processes show very high levels of intra-wafer, intra-run wafer-to-wafer, and run-to-run uniformities in the layer thickness as well as in the n-type doping concentration. N-type background doping levels less that 5e13 /cm3 have been reached. AFM measurements reveal a surface roughness of 0.2nm (rms). The density of epitaxy related defects such as triangular defects, carrots, and ingrown particles due to downfall are very low, as confirmed by high blocking yields.