Detection of Crystal Defects in High Doped Epitaxial Layers and Substrates by Photoluminescence

Abstract

In this work, the detection and characterization of various crystal defects in high doped silicon carbide by photoluminescence (PL) is explored. The detection of basal plane dislocations in high doped epitaxial buffer layers is demonstrated using the near ultraviolet (NUV) spectra. Several characteristic defects in high doped 150mm substrates like grain boundaries and screw dislocations are also detected and characterized using the NUV PL spectra. Further characterization using molten potassium hydroxide etching is presented.