Ni-Al-Ti Ohmic Contacts on Al Implanted 4H-SiC

Abstract

This study shows that an Al-Ti bilayer with an Al to Ti atomic ratio suitable forohmic contacts on p-type 4H-SiC can be covered by a Ni film during the high temperature alloying process, without altering the ohmic nature, while eliminating a detrimental contact morphology caused by the presence of molten Al-Si during alloying. On 1×1020 cm-3 Al-implanted 4H-SiC layer, the RT specific contact resistance of this Ni-Al-Ti contact measured by TLM-C method is (3 ± 1)×10-6 Ωcm2.