Affiliation:
1. KTH-Royal Institute of Technology
2. Warsaw University of Technology
Abstract
This paper describes a simple fault protection system for Current Source Inverter built with normally-on SiC JFETs. Because all transistors are in on-state after loss of the gate drive(s) supply, list of possible fault modes is extended in reference to standard inverters. That is also why an additional normally off switch is introduced in the DC link. Operation principles of the protection system which follows the drain-source voltages of JFETs and the current of the DC link are presented. The 2kVA/100kHz model of the inverter equipped with the proposed system is validated via various laboratory tests including short-circuits and the auxiliary supply turn off.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference8 articles.
1. Friedrichs P. et all , The vertical silicon carbide JFET – a fast and low loss solid state power switching device, 9-th European Conference on Power Electronics and Applications Conf. Record, EPE (2001).
2. Weis B., Braun M., Friedrichs P., Turn-off and short-circuit behavior of 4H SiC JFETs, IEEE Industry Applications Conference IAS 2001, vol. 1, 365-369.
3. Friedrichs P., Silicon Carbide Power semiconductors – New opportunities for high efficiency, 3-rd IEEE Conf. On Industrial Electronics and Applications ICIEA 2008, 1770-1774.
4. Cass Callaway J. et. all, Evaluation of SiC JFETs for a Three-Phase Current-Source Rectifier with High Switching Frequency, XXII Applied Power Electronics Conference, APEC 2007, p.345 – 351.
5. Kolar J.W., Friedli T., Krismer F., Round S. D, Design and Performance of a 200kHz All-SiC JFET Current Source Converter, IEEE Industry Applications Society Annual Meeting IAS 2008, 1-8.
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