Silicon carbide power semiconductors — new opportunities for high efficiency-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Silicon carbide power semiconductors — new opportunities for high efficiency

Published:2008-06 Issue: Volume: Page:
ISSN:
Container-title:2008 3rd IEEE Conference on Industrial Electronics and Applications
language:
Short-container-title:

Author:

Friedrichs Peter

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4570851/4582468/04582824.pdf?arnumber=4582824

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and Evaluation of Reduced Self-Capacitance Inductor in DC/DC Converters with Fast-Switching SiC Transistors;IEEE Transactions on Power Electronics;2014-05

2. Analysis and Experimental Verification of the Influence of Fabrication Process Tolerances and Circuit Parasitics on Transient Current Sharing of Parallel-Connected SiC JFETs;IEEE Transactions on Power Electronics;2014-05

3. Parallel-Operation of Discrete SiC BJTs in a 6-kW/250-kHz DC/DC Boost Converter;IEEE Transactions on Power Electronics;2014-05

4. A current-source concept for fast and efficient driving of silicon carbide transistors;Archives of Electrical Engineering;2013-06-01

5. Challenges Regarding Parallel Connection of SiC JFETs;IEEE Transactions on Power Electronics;2013-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP