Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique-Reference-Cited by-同舟云学术

Morphology Improvement of Step Bunching on 4H-SiC Wafers by Polishing Technique

Published:2010-04 Issue: Volume:645-648 Page:763-765
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kato Tomohisa¹,Kinoshita Akimasa¹,Wada Keisuke²,Nishi Takashi³,Hozomi Eiji²,Taniguchi Hiroyoshi¹,Fukuda Kenji¹,Okumura Hajime¹

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. National Institute of Advanced Industrial Science and Technology AIST

3. National Institute of Advanced Industrial Science and Technology

Abstract

In this paper, we report a new polishing technique regarding the elimination of step bunching on the silicon carbide (SiC) surface. The step bunching generation is often observed as frequent phenomenon on the surface of SiC epilayers grown on low off-angle (0001) SiC wafers and on SiC devices after annealing to activate the dopants. We polished the step bunching surface using a chemical mechanical polishing (CMP) technique reported in a previous study, and we succeeded to improve the morphology with a flat and smooth surface which showed a small Rms value of around 0.1nm. We especially found an excellent polishing effect for the control of leakage current in reverse I-V characteristics of SiC Schottky barrier diodes (SBD).

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.763.pdf

Reference4 articles.

1. T. Kato, K. Wada, E. Hozomi, H. Taniguchi, T. Miura, S. Nishizawa and K Arai: Materials Science Forum, Vol. 556-557, (2004), p.753.

2. M. A. Capano, S. Ryu, J. A. Cooper, Jr., M. R. Melloch, K. Rottner, S. Karlsson, N. Nordell, A. Powell and D. E. Walker, Jr.: J. Electron. Mater. Vol. 28 (1999), p.214.

3. M.A. Capano, S. Ryu, M.R. Melloch, J.A. Cooper, Jr. and M.R. Buss: J. Electron. Mater, Vol. 27 (1998), p.370.

4. K. Ohtsuka, Y. Yatsuno, K. Kuroda, H. Sugimoto, Y. Tarui, M. Imaizumi and T. Takami: Physica B, Vol 376-377 (2006), p.370.

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