Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method-Reference-Cited by-同舟云学术

Growth of 4H-SiC Crystals on the 8° Off-Axis 6H-SiC Seed by PVT Method

Published:2010-04 Issue: Volume:645-648 Page:17-20
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Tymicki Emil¹,Grasza Krzysztof¹,Racka Katarzyna¹,Raczkiewicz Marcin¹,Łukasiewicz Tadeusz¹,Gała Maciej¹,Kościewicz Kinga¹,Diduszko Ryszard¹,Bożek Rafał²

Affiliation:

1. Institute of Electronic Materials Technology

2. Warsaw University

Abstract

In this work we present the growth of 4H-SiC crystals (2 inch in diameter) on the 8° off- axis C-face 6H-SiC seeds, inclined toward [11-20] direction. The growth of crystals by physical vapour transport method (PVT) was realized with the open seed backside in the experimental setup with graphite resistive heater. Some of the crystals were doped with cerium in the purpose of the 4H polytype growth stabilization. For Ce-doped crystals the seed backside carbonization process was decreased in comparison with such effect observed in the undoped SiC crystals.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.17.pdf

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1. Effect of cerium impurity on the stable growth of the 4H-SiC polytype by the physical vapour transport method;Journal of Crystal Growth;2022-05

2. Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method;Materials Science Forum;2012-05