Affiliation:
1. Denso Corporation
2. R&D Partnership for Future Power Electronics Technology
Abstract
We have investigated the techniques to improve the channel mobility of SiC MOSFETs
and found that the hydrogen termination of dangling bonds at a MOS interface is very effective in
improving the channel mobility, particularly that of the interface fabricated on a (11-20) face wafer. A
high channel mobility of MOSFET on the (11-20) face was achieved to 244cm2/Vs by new process
which can terminate dangling bonds by hydrogen. The vertical MOSFET, which is prepared using this
process, has a low on-resistance of 5.7 mΩcm2 and a breakdown voltage of 1100 V. The channel
resistance is estimated at 0.58 mΩcm2.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
8 articles.
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