Simulation of Segmented Double-Gate MOSFETs
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Published:2012-06
Issue:
Volume:721
Page:325-330
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Reichardt Andras1,
Varga Gábor1
Affiliation:
1. Budapest University of Technology and Economics
Abstract
Nowdays semiconductor manufacturing technology approaches its limit of miniaturization. There is a need for devices with low impact of miniaturization on its functionality. We present here simulation results of double-gate MOSFET devices with variable silicon channel width. Effects of segmentation is shown in characteristics of devices.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science