Affiliation:
1. Kansai Electric Power Co., Inc.
2. Central Research Institute of Electric Power Industry (CRIEPI)
Abstract
This paper reports on the achievement of high-power 4H-SiC Zener diodes which have a
high-doped pn junction with a large active area of 4 mm x 4 mm. The temperature coefficient of the
breakdown voltage is as small as 5.7x10-5 1/K (positive) in the temperature range 20-300°C. In
addition, reverse power capabilities of 6.3 kW (40 kW/cm2) at 20°C and 6.0 kW (38 kW/cm2) at
300°C during rectangular pulsed power operation (tw = 1 ms) have been achieved without device
failure.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
4 articles.
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